METHODS OF FORMING RELIEF IMAGES
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United States of America Patent
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app pub date -
Nov 6, 2015
filing date -
Nov 7, 2014
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Abstract
In a preferred aspect, methods are provided that comprise a) providing a semiconductor substrate comprising a patterned mask over a layer to be patterned; b) applying a layer of a first composition over the mask, wherein the composition comprises a polymer and the layer is coated on a sidewall of the mask; c) applying a layer of a second composition over the semiconductor substrate in a volume adjacent the coated sidewall of the mask; and d) removing the first composition from the sidewall of the mask, thereby exposing the layer to be patterned and forming a gap between the mask sidewall and the second composition layer to provide a relief image. The methods find particular applicability in semiconductor device manufacture.
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