ACTIVE DEVICE CIRCUIT SUBSTRATE

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United States of America Patent

APP PUB NO 20160126356A1
SERIAL NO

14819434

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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An active device circuit substrate includes a substrate, a plurality of active devices, and a first planarization layer. Each active device includes a gate electrode, a channel layer stacked with the gate electrode, a source electrode, and a drain electrode. The source electrode and the drain electrode are disposed on the channel layer and located on opposite sides of the channel layer to define a channel area of the channel layer. The active devices include a first active device and a second active device. The first active device is disposed between the first planarization layer and the substrate, and the first planarization layer is disposed between the first active device and the second active device. A minimum linear distance between the channel area of the first active device and the channel area of the second active device along a direction parallel to the substrate is not smaller than 5 μm.

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Patent Owner(s)

Patent OwnerAddress
E INK HOLDINGS INCNO 3 LI SHIN RD 1 SCIENCE-BASED INDUSTRIAL PARK HSINCHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hsu, Cheng-Hang Hsinchu, TW 23 40
Hsu, Yu-Lin Hsinchu, TW 17 9
Shinn, Ted-Hong Hsinchu, TW 136 961
Yu, Tzung-Wei Hsinchu, TW 13 35

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