CMOS IMAGE SENSOR WITH ENHANCED DYNAMIC RANGE
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United States of America Patent
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Issued Date -
May 5, 2016
app pub date -
Nov 25, 2014
filing date -
Oct 31, 2014
priority date (Note) -
Abandoned
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Abstract
An image sensor includes a semiconductor substrate having a main surface, a transfer transistor having a transfer gate disposed on the main surface, a light-sensing structure on one side of the transfer gate, a floating diffusion node on the other side of the transfer gate, a reset transistor serially connected to the transfer transistor via the floating diffusion node, a source-follower transistor having a source-follower gate, and a vertical capacitor having a first vertical electrode plate and a second vertical electrode plate. The first vertical electrode plate is electrically connected to the source-follower gate and the floating diffusion node.
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