Ferroelectric ceramics, electronic component and manufacturing method of ferroelectric ceramics

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United States of America Patent

PATENT NO 10854808
APP PUB NO 20160118574A1
SERIAL NO

14886138

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Abstract

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Ferroelectric ceramics including: a Pb(Zr1-BTiB)O3 seed crystal film formed on a foundation film; and a Pb(Zr1-xTix)O3 crystal film, wherein: the seed crystal film is formed by sputtering while the foundation film is being disposed on an upper side of a sputtering target and the foundation film is being made to face the sputtering target; in the seed crystal film, a Zr/Ti ratio on the crystal film side from the center in the thickness direction thereof is larger than a Zr/Ti ratio on the foundation film side from the center in the thickness direction thereof; the crystal film is crystallized by coating and heating a solution containing, in an organic solvent, a metal compound wholly or partially containing ingredient metals of the crystal film and a partial polycondensation product thereof; and the B and the x satisfy formulae 2 and 3, respectively, below,

description='In-line Formulae' end='lead'0.1<B<1  formula 2description='In-line Formulae' end='tail'

description='In-line Formulae' end='lead'0.1<x<1  formula 3.description='In-line Formulae' end='tail'

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Patent Owner(s)

Patent OwnerAddress
KRYSTAL INC2-1-17 ASUTOPIA UBE-SHI YAMAGUCHI 755-0152

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kijima, Takeshi Chiba, JP 167 1581

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