SEMICONDUCTOR LIGHT-EMITTING ELEMENT
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United States of America Patent
Stats
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N/A
Issued Date -
Apr 28, 2016
app pub date -
Oct 8, 2015
filing date -
Oct 23, 2014
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
A semiconductor light-emitting element comprises: a first semiconductor layer, an active layer having a multiple quantum well structure in which a plurality of well layers and a plurality of barrier layers are alternately layered, an electron block layer, and a second semiconductor layer. Among the barrier layers, an endmost barrier layer closest to the second semiconductor layer includes a first endmost barrier layer part and a second endmost barrier layer part formed on a side closer to the second semiconductor layer than the first endmost barrier layer part and having a larger band gap than that of the first endmost barrier layer part. The first endmost barrier layer part has a band gap that is larger than that of each of the well layers and is smaller than that of each barrier layer other than the endmost barrier layer.
First Claim
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