Semiconductor device

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United States of America Patent

PATENT NO 9859414
SERIAL NO

14774125

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Abstract

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A semiconductor device includes a drift layer 20 of a first conductivity type, a base layer 30 of a second conductivity type that is disposed on the drift layer 20 and is connected to a source electrode 90, and a column layer 50 of a second conductivity type that is connected to the source electrode 90 and penetrates the base layer 30 to extend into the drift layer 20.

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Patent Owner(s)

Patent OwnerAddress
SHINDENGEN ELECTRIC MANUFACTURING CO LTD2-1 OHTEMACHI 2-CHOME CHIYODA-KU TOKYO 100-0004

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Asada, Takeshi Hanno, JP 35 147
Kitada, Mizue Hanno, JP 30 220
Suzuki, Noriaki Hanno, JP 63 375
Yamaguchi, Takeshi Hanno, JP 387 3360

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