THIN FILM TRANSISTOR ELEMENT, PRODUCTION METHOD FOR SAME, AND DISPLAY DEVICE
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United States of America Patent
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Apr 28, 2016
app pub date -
Feb 27, 2014
filing date -
Jun 4, 2013
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Abstract
A thin-film transistor includes: a gate electrode; a source electrode; a drain electrode; a channel layer that is in contact with the source electrode and the drain electrode, and includes oxide semiconductor; and a gate insulating layer that is disposed between the gate electrode and the channel layer, and is in contact with the gate electrode and the channel layer, wherein a region of the gate insulating layer that is in contact with the channel layer is a silicon compound film, and the silicon compound film contains silicon, nitrogen, and oxygen, and is formed by performing plasma processing for introducing, into a film containing silicon and one of nitrogen and oxygen, the other of nitrogen and oxygen.
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