METHODS FOR PREPARING A TITANIUM OXIDE FILM AND A COMPOSITE FILM COMPRISING THE SAME

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United States of America Patent

APP PUB NO 20160118243A1
SERIAL NO

14692099

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Abstract

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The present invention relates to a method for preparing a titanium oxide film and a method for preparing a composite film comprising a titanium oxide film. Particularly, the present invention relates to a method for preparing the titanium oxide film which serves as a passivation layer for the oxide semiconductor. In the present method for preparing the passivation layer, a low-reactive metal alkoxide compound is used as a precursor to form the passivation layer by the atomic layer deposition. Therefore, the deterioration of the oxide semiconductor during the preparation process may be avoided.

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Patent OwnerAddress
NATIONAL TAIWAN UNIVERSITYNO 1 SEC 4 ROOSEVELT ROAD TAIPEI 10617

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
LIN, Yuan-Yu Taipei City, TW 8 28
TSAI, Feng-Yu Taipei City, TW 13 76

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