METHOD AND SYSTEM FOR TREATMENT OF DEPOSITION REACTOR
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United States of America Patent
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Issued Date -
Apr 28, 2016
app pub date -
Jan 4, 2016
filing date -
Feb 1, 2013
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Abandoned
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Abstract
A system and method for treating a deposition reactor are disclosed. The system and method remove or mitigate formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation.
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