TOPOLOGICAL INSULATOR FORMED NEW SURFACE ELECTRONIC STATE AND THE PREPARATION METHOD THEREOF
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United States of America Patent
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Apr 21, 2016
app pub date -
Oct 19, 2015
filing date -
Oct 20, 2014
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The disclosure describes a topological insulator having a new surface electronic state and a preparation method thereof, and more particularly, to a topological insulator having a new surface electronic state, the topological insulator including a unimolecular metal layer formed on a 3D topological insulator, and a method of preparing a topological insulator having a new surface electronic state, the method including: heating and cooling at least one selected from the group consisting of tellurium (Te) and selenium (Se), and bismuth (Bi) to prepare an alloy; and forming a unimolecular metal layer on the alloy.
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