RESISTIVE RANDOM ACCESS MEMORY
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United States of America Patent
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Issued Date -
Apr 21, 2016
app pub date -
Dec 3, 2014
filing date -
Oct 15, 2014
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Abstract
A resistive random access memory including two electrode layers and a multi-resistance layer mounted between the two electrode layers. The multi-resistance layer consists essentially of insulating material with oxygen and lithium ions. The number of resistance states of a memory element can be increased by the resistive random access memory to increase the integration density of a memory module having a plurality of memory elements.
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