ESD PROTECTION CIRCUIT
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United States of America Patent
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Issued Date -
Apr 21, 2016
app pub date -
Mar 19, 2015
filing date -
Oct 21, 2014
priority date (Note) -
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Abstract
An electrostatic discharge (ESD) protection circuit may include an n-channel metal oxide semiconductor (NMOS) having a drain connected to a power terminal and a source and a gate connected to a ground terminal, a capacitor connected to the drain and a bulk terminal of the NMOS in parallel, and a plurality of series-connected diodes having anodes of one ends thereof connected to the bulk terminal and cathodes of the other ends thereof connected to the ground terminal.
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