METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
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United States of America Patent
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Issued Date -
Apr 21, 2016
app pub date -
Dec 11, 2014
filing date -
Oct 15, 2014
priority date (Note) -
Abandoned
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Abstract
A method for fabricating a semiconductor device is provided. The method includes the following steps. A substrate including a memory cell region and a peripheral region is provided, and a plurality of isolation structures are formed in the substrate. Each of the isolation structures contains an exposed portion protruding beyond the surface of the substrate. A first dielectric layer is formed on the substrate. A protective layer is formed on a sidewall of the exposed portion of each of the isolation structures. The first dielectric layer on the peripheral region is removed. A second dielectric layer is formed on the substrate of the peripheral region.
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