DATA WRITING METHOD, MEMOEY CONTROL CIRCUIT UNIT AND MEMORY STORAGE APPARATUS

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United States of America Patent

APP PUB NO 20160110112A1
SERIAL NO

14564113

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Abstract

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A data writing method for a rewritable non-volatile memory module is provided. The method includes: if data belongs to a first pattern, using a first compression/decompression circuit to compress the data to generate compressed data and writing the compressed data into the rewritable non-volatile memory module; and if data belongs to a second pattern, using a second compression/decompression circuit to compress the data to generate another compressed data and writing the another compressed data into the rewritable non-volatile memory module, wherein the compression speed of the first compression/decompression circuit is higher than that of the second compression/decompression circuit, and the compression rate of the first compression/decompression circuit is lower than that of the second compression/decompression circuit.

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Patent Owner(s)

Patent OwnerAddress
PHISON ELECTRONICS CORPNO 1 QUN YI RD JHUNAN MIAOLI 350

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Yeh, Chih-Kang Kinmen County, TW 153 1636

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