LARGE-AREA SINGLE-CRYSTAL MONOLAYER GRAPHENE FILM AND METHOD FOR PRODUCING THE SAME
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United States of America Patent
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N/A
Issued Date -
Apr 21, 2016
app pub date -
May 21, 2014
filing date -
May 21, 2013
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
The present invention relates to a large-area single-crystal monolayer graphene film in which a graphene layer is formed on a single-crystal metal catalyst layer whose crystal plane orientation is (111) optionally on a substrate. In the large-area single crystal monolayer graphene film of the present invention, a single-crystal metal catalyst layer whose crystal plane orientation is (111) can be formed in the shape of a foil, plate, block or tube optionally on a substrate and a graphene layer is formed on the catalyst layer. The present invention also relates to a method for producing a large-area single-crystal monolayer graphene film whose crystal plane orientation is (111) by annealing and chemical vapor deposition of a metal precursor. According to the method of the present invention, a high-quality large-area graphene thin film applicable as a material for transparent electrodes, display devices, semiconductor devices, separation membranes, fuel cells, solar cells, and sensors can be produced on a commercial scale.
First Claim
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