RESISTIVE RANDOM ACCESS MEMORY DEVICE HAVING NANO-SCALE TIP AND NANOWIRE, MEMORY ARRAY USING THE SAME AND FABRICATION METHOD THEREOF
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United States of America Patent
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Apr 14, 2016
app pub date -
Oct 13, 2015
filing date -
Oct 14, 2014
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Abstract
A resistive random access memory device having a nano-scale tip and a nanowire is provided. A memory array using the same also is provided and fabrication method thereof. A technique is provided for forming a bottom electrode having an upwardly protruding tapered tip structure through etching a semiconductor substrate and a top electrode being formed of a nanowire and a technique forming a resistive random access memory device at a location intersected with each other in order that an area of each memory cell is minimized and that an electric field is focused on the tip of the bottom electrode across the top electrode.
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