LIGHT EMITTING DEVICE AND METHOD FOR PREPARING THE SAME
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United States of America Patent
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Issued Date -
Apr 14, 2016
app pub date -
Apr 8, 2014
filing date -
May 22, 2013
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Abandoned
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Abstract
Provided are a light-emitting element and a method for preparing same. The method includes a method for growing a p-type semiconductor layer having a low-concentration doping layer, an undoped layer and a high-concentration doping layer. During the growth of the low-concentration doping layer and the high-concentration doping layer, both N2 gas and H2 gas are supplied, whereas, during the growth of the undoped layer, the supply of H2 gas is shut off and N2 gas is supplied. Accordingly, the doping concentration of Mg contained in the undoped layer can be further lowered, and thus, hole mobility within the p-type semiconductor layer can be enhanced.
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