TRANSISTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME

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United States of America Patent

APP PUB NO 20160104782A1
SERIAL NO

14509151

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Abstract

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A method of manufacturing a transistor structure includes a step of implanting a light dosage into a substrate at a bit line junction and two cell side junctions, and a step of implanting a light dosage into the bit line junction an additional time. A uniform region having a substantially uniform dopant concentration is formed at the bit line junction. The dopant concentration of the uniform region is higher than that of the cell side junctions and higher than that of the region of the bit line junction under the uniform region.

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Patent Owner(s)

Patent OwnerAddress
MICRON TECHNOLOGY INC8000 SOUTH FEDERAL WAY BOISE ID 83716-9632

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
HU, YAW-WEN TAOYUAN COUNTY, TW 22 52
LEE, TZUNG-HAN TAIPEI CITY, TW 135 609
SHIH, NENG-TAI NEW TAIPEI CITY, TW 37 240

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