COMMON CONTACT OF N++ AND P++ TRANSISTOR DRAIN REGIONS IN CMOS
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United States of America Patent
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Sep 28, 2015
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Oct 13, 2014
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Abstract
Implementations of the present disclosure relate to semiconductor devices such as transistors used for amplifying or switching electronic signals. In one implementation, an integrated circuit is provided. The integrated circuit comprises a first transistor having a first conductivity type, the first transistor comprising a first gate, an first source region and a first drain region disposed on opposite sides of the first gate, and a second transistor having a second conductivity type opposite from the first conductivity type of the first transistor, the second transistor comprising a second gate, a second source region and a second drain region disposed on opposite sides of the second gate, wherein the second drain region of the second transistor is abutted against the first drain region of the first transistor.
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