ONE TIME PROGRAMMABLE NON-VOLATILE MEMORY

Number of patents in Portfolio can not be more than 2000

United States of America Patent

APP PUB NO 20160104712A1
SERIAL NO

14842851

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Abstract

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A one time programmable (OTP) non-volatile memory including a substrate, a switch device and a fuse structure is provided. The switch device is disposed on the substrate. The fuse structure includes a conductive layer, a spacer and a plug. The conductive layer is coupled to a terminal of the switch device. The spacer is disposed on a sidewall of the conductive layer. The plug is disposed on the conductive layer and covers the spacer. An overlap area of an overlap portion between the plug and a top surface of the conductive layer is smaller than a top view area of the plug.

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Patent Owner(s)

Patent OwnerAddress
EMEMORY TECHNOLOGY INCROOM 305 NO 47 PARK AVENUE II RD HSINCHU SCIENCE PARK HSIN-CHU 300091

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hsu, Te-Hsun Hsinchu County, TW 32 279

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