SURFACE TREATMENT TO IMPROVE CCTBA BASED CVD CO NUCLEATION ON DIELECTRIC SUBSTRATE
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
N/A
app pub date -
Dec 21, 2015
filing date -
Sep 13, 2013
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
Embodiments of the present invention generally relate to a method of forming a cobalt layer on a dielectric material without incubation delay. Prior to depositing the cobalt layer using CVD, the surface of the dielectric material is pretreated at a temperature between 100° C. and 250° C. Since the subsequent CVD cobalt process is also performed at between 100° C. and 250° C., one processing chamber is used for pretreating the dielectric material and forming of the cobalt layer. The combination of processing steps enables use of two processing chambers to deposit cobalt.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully