VAPOR PHASE GROWTH APPARATUS AND VAPOR PHASE GROWTH METHOD
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United States of America Patent
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Apr 14, 2016
app pub date -
Oct 7, 2015
filing date -
Oct 9, 2014
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Abstract
A vapor phase growth apparatus includes a reaction chamber, a shower plate provided at an upper part of the reaction chamber and having a first gas ejection hole and a second gas ejection hole formed in a surface thereof close to the reaction chamber, a first gas supply path connected to the first gas ejection hole and supplying a first process gas including a group III element to the reaction chamber, a second gas supply path connected to the second gas ejection hole and supplying a second process gas including a group V element to the reaction chamber, a first connection path connecting the first gas supply path and the second gas supply path, and a first control unit controlling the passage and stop of gas through the first connection path.
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