ULTRATHIN FILM RESISTIVE MEMORY DEVICES
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United States of America Patent
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Apr 7, 2016
app pub date -
Oct 7, 2014
filing date -
Oct 7, 2014
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Provided are thin resistive devices and related methods, the devices featuring a resistance-switchable active layer having a thickness in the range of from about 1 to about 5 nm and an insulating layer surmounting the resistance-switchable active layer, the insulating layer having a thickness in the range of from about 0.5 nm to about 5 nm.
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