NON-VOLATILE MEMORY DEVICES WITH THIN-FILM AND MONO-CRYSTALLINE SILICON TRANSISTORS
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United States of America Patent
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Issued Date -
Apr 7, 2016
app pub date -
May 6, 2015
filing date -
Oct 6, 2014
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Abandoned
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Abstract
A non-volatile memory device combines thin-film transistor-based memory cells with bulk mono-crystalline silicon transistors, which can more efficiently drive bit lines for fast sensing of the stored data in the thin-film memory cells.
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