MoNx as a Top Electrode for TiOx Based DRAM Applications
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United States of America Patent
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Issued Date -
Apr 7, 2016
app pub date -
Oct 6, 2014
filing date -
Oct 6, 2014
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Abandoned
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Abstract
A capacitor stack includes a base bottom electrode layer including a conductive metal nitride material. A second bottom electrode layer is formed above the first bottom electrode layer. The second bottom electrode layer includes a conductive metal oxide material, wherein the crystal structure of the conductive metal oxide material promotes a desired high-k crystal phase of a subsequently deposited dielectric layer. A dielectric layer is formed above the second bottom electrode layer. A molybdenum nitride or a molybdenum oxy-nitride layer is formed above the dielectric layer. A fourth top electrode layer is formed above the third top electrode layer. The base top electrode layer includes a conductive metal nitride material.
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