IMAGE SENSOR WITH DEEP WELL STRUCTURE AND FABRICATION METHOD THEREOF
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United States of America Patent
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Issued Date -
Apr 7, 2016
app pub date -
Nov 20, 2014
filing date -
Oct 3, 2014
priority date (Note) -
Abandoned
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Abstract
An image sensor device includes a substrate having a first conductivity type. A plurality of photo-sensing regions including a first, a second, and a third photo-sensing regions corresponding to the R, G, B pixels are provided on the substrate. An insulation structure is disposed on the substrate to separate the photo-sensing regions from one another. A photodiode structure is formed within each photo-sensing region. A deep well structure having a second conductivity type. The deep well structure only overlaps with the second and third photo-sensing regions. The deep well structure does not overlap with the first photo-sensing region.
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