SEMICONDUCTOR MEMORY DEVICE WITH IMPROVED ACTIVE AREA/WORD LINE LAYOUT
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United States of America Patent
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Issued Date -
Apr 7, 2016
app pub date -
May 15, 2014
filing date -
May 16, 2013
priority date (Note) -
Abandoned
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Abstract
One semiconductor device includes a bit line extending in a straight line in an X direction, a first and a second horizontal active region extending in the X direction, and a sloped active region arranged between the first and the second horizontal regions and inclined with respect to the X direction, an active region arranged at the center of a bit line impurity diffusion region, a first word line arranged in the first horizontal active region segment, a second word line arranged in the second horizontal active region segment, and a third and a fourth word line arranged in the sloped active region segment next to each other with the bit line impurity diffusion region interposed therebetween.
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