DOUBLE GATED FLASH MEMORY

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United States of America Patent

SERIAL NO

14964907

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Abstract

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A split gate memory cell is fabricated with a fin structure between a memory gate stack and a select gate. Embodiments include a first channel region under the memory gate stack and a second channel region under the select gate.

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Patent Owner(s)

Patent OwnerAddress
GLOBALFOUNDRIES SINGAPORE PTE LTD60 WOODLANDS INDUSTRIAL PARK D STREET 2 SINGAPORE 738406

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
QUEK, Elgin Singapore, SG 125 2412
TAN, Shyue Seng (Jason) Singapore, SG 9 96
TOH, Eng Huat Singapore, SG 256 1730

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