SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

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United States of America Patent

SERIAL NO

14830925

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Abstract

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A semiconductor device includes: a semiconductor substrate; a ferroelectric capacitor above the semiconductor substrate; a first guard ring around the ferroelectric capacitor above the semiconductor substrate. The ferroelectric capacitor includes a bottom electrode, a capacitor insulating film and a top electrode. The first guard ring includes a first pseudo bottom electrode, a first pseudo capacitor insulating film and a first pseudo top electrode, and surrounds the ferroelectric capacitors in planar view.

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Patent Owner(s)

Patent OwnerAddress
FUJITSU SEMICONDUCTOR LIMITED2-10-23 SHIN-YOKOHAMA KOHOKU-KU YOKOHAMA-SHI KANAGAWA 222-0033

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
SASHIDA, Naoya Kuwana, JP 48 439
SUGIMACHI, TATSUYA KUWANA, JP 6 35

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  • 2 Citation Count
  • H01L Class
  • 13.47 % this patent is cited more than
  • 9 Age
Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges1792827316886303131891006776342711301 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 8081 - 9091 - 100100 +050010001500200025003000350040004500500055006000650070007500800085009000

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