METHOD FOR FORMING THROUGH SUBSTRATE VIAS
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United States of America Patent
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Issued Date -
Mar 31, 2016
app pub date -
Sep 29, 2014
filing date -
Sep 29, 2014
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Abandoned
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Abstract
A method for forming through silicon vias (TSVs) in a silicon substrate is disclosed. The method involves forming a silicon post as an annulus in a first side of a silicon substrate, removing material from an opposite side to the level of the annulus, removing the silicon post and replacing it with a metal material to form a metal via extending through the thickness of the substrate.
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