Guard aperture to control ion angular distribution in plasma processing
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United States of America Patent
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Dec 6, 2016
Grant Date -
Mar 31, 2016
app pub date -
Sep 30, 2014
filing date -
Sep 30, 2014
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Abstract
A guard aperture is described to control the ion angular distribution in plasma processing in one example a workpiece processing system has a plasma chamber, a plasma source to generate a plasma containing gas ions in the plasma chamber, the plasma forming a sheath above the workpiece, the sheath having an electric field, a workpiece holder in the chamber to apply a bias voltage to the workpiece to attract ions across the plasma sheath to be incident on the workpiece, a control aperture between the sheath and the workpiece, the aperture being positioned to modify an angular distribution of the ions that are incident on the workpiece, and a guard aperture between the sheath and the control aperture to isolate an electrical field of the control aperture from the plasma sheath.
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