SELECTIVE CURRENT BOOSTING IN A STATIC RANDOM-ACCESS MEMORY
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United States of America Patent
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Issued Date -
Mar 31, 2016
app pub date -
Sep 27, 2014
filing date -
Sep 27, 2014
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Abandoned
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Abstract
Systems and methods include a static random-access memory (SRAM) bit cell circuit having an access transistor configured to pass a read current to a storage node, the access transistor including an access transistor back gate. The access transistor back gate is biased to enable selective current boosting of the read current during a read operation.
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