REFERENCE VOLTAGE GENERATION FOR SENSING RESISTIVE MEMORY
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Mar 31, 2016
app pub date -
Sep 27, 2014
filing date -
Sep 27, 2014
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
Systems and methods relate to providing a correct reference voltage for reading a resistive memory element such as a magnetoresistive random access memory (MRAM) bit cell. Two or more reference voltages are provided for each MRAM bit cell and a correct reference voltage is selected from the two or more reference voltages for reading the MRAM bit cell. The correct reference voltage meets sensing margin requirements for reading the MRAM bit cell and overcomes non-idealities and offset voltages in read circuitry for reading the MRAM bit cell. An indication of the correct reference voltage is stored in a non-volatile latch or other non-volatile programmable memory and provided to the read circuitry.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully