METHOD OF INCLUDING DEADSORPTION AND CRYSTAL GROWTH
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United States of America Patent
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app pub date -
Sep 28, 2015
filing date -
Sep 29, 2014
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Abstract
A method can include deadsorbing an impurity from an initial material to form a deadsorbed material, melting the deadsorbed material to form a melt within the crucible, and growing a crystal from the melt. In an embodiment, growing is performed at a growth rate that is at least 1.1 times a growth rate of a different crystal formed from a melt of the initial material using a same crystal growth technique, having a same cross-sectional shape, size, and crystal orientation, and a same haze level. In another embodiment, the method can include crushing an initial material to reduce closed porosity before or during deadsorbing impurities.
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