Bootstrap Circuit

Number of patents in Portfolio can not be more than 2000

United States of America Patent

APP PUB NO 20160087529A1
SERIAL NO

14490899

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A bootstrap circuit includes an N-channel MOS transistor including: a first N-type semiconductor layer formed on a surface of a P-type semiconductor substrate and electrically connected to a bootstrap capacitor; a P-type semiconductor layer formed on a surface of the first N-type semiconductor layer; a second N-type semiconductor layer formed on a surface of the P-type semiconductor layer; a first electrode electrically connected to the P-type semiconductor layer; a second electrode electrically connected to the second N-type semiconductor layer; and a power-source terminal connected to each of the first electrode and the second electrode for supplying a power-source voltage thereto, the N-channel MOS transistor supplying power to the bootstrap capacitor, and a current limiting element connected between the power-source terminal and the first electrode.

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Patent Owner(s)

Patent OwnerAddress
SANKEN ELECTRIC CO LTD3-6-3 KITANO NIIZA-SHI SAITAMA-KEN 352-8666

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hara, Masato Niiza-shi, JP 50 500
Kubota, Hideyuki Niiza-shi, JP 26 82
Maekawa, Yuuya Niiza-shi, JP 1 2
Sakai, Kunitaka Niiza-shi, JP 3 14

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