EPITAXIAL SILICON WAFER
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United States of America Patent
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Mar 24, 2016
app pub date -
Sep 16, 2015
filing date -
Sep 18, 2014
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An epitaxial silicon wafer includes: a silicon wafer; and a silicon epitaxial layer formed on the silicon wafer, in which a W concentration obtained by a metal analysis of a surface of the silicon epitaxial layer using an inductively coupled plasma mass spectrometry is 1×106 atoms/cm2 or less. Further, the W concentration obtained by the metal analysis of the surface of the silicon epitaxial layer using the inductively coupled plasma mass spectrometry is preferably 1×107 atoms/cm2 or less.
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