SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
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United States of America Patent
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Issued Date -
Mar 24, 2016
app pub date -
Apr 16, 2014
filing date -
Apr 30, 2013
priority date (Note) -
Abandoned
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Abstract
One semiconductor device has a groove formed on one surface of a semiconductor substrate, a gate electrode formed on the lower part of the groove with a gate insulation film interposed there between, a side wall insulation film made of a nitride film formed on the inner wall of the groove above the gate electrode, and an embedded insulation film formed in the groove enclosed by the side wall insulation film above the gate electrode. The side wall insulation film is shaped so that the width increases closer the bottom part of the groove.
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