COPPER WIRE THROUGH SILICON VIA CONNECTION
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United States of America Patent
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app pub date -
Sep 22, 2014
filing date -
Sep 22, 2014
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Abstract
A semiconductor device includes a semiconductor substrate having opposing first and second main surfaces, a via (TSV) extending from the first main surface of the substrate to the second main surface of the substrate, first electrical connectors formed near the first main surface and second electrical connectors formed near the second main surface. There are insulated bond wires, each extending through the via and having a first end bonded to a respective one of the first electrical connectors and a second end bonded to a respective one of the second electrical connectors. The via may be filled with an encapsulating material.
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