CMP POLISHING SOLUTION AND POLISHING METHOD USING SAME
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United States of America Patent
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Issued Date -
Mar 24, 2016
app pub date -
Apr 24, 2014
filing date -
Apr 25, 2013
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Abstract
A CMP polishing liquid for polishing a ruthenium-based metal, comprising polishing particles, an acid component, an oxidizing agent, and water, wherein the acid component contains at least one selected from the group consisting of inorganic acids, monocarboxylic acids, carboxylic acids having a plurality of carboxyl groups and having no hydroxyl group, and salts thereof, the polishing particles have a negative zeta potential in the CMP polishing liquid, and the pH of the CMP polishing liquid is less than 7.0.
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