SUBSTRATE STRUCTURE AND METHOD OF FABRICATING THE SAME

Number of patents in Portfolio can not be more than 2000

United States of America Patent

SERIAL NO

14607572

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

The present invention provides a substrate structure and a method of fabricating the substrate substrure. The method includes: forming a first wiring layer on a first carrier, forming a dielectric layer on the first wiring layer, forming a second wiring layer on the dielectric layer, forming an insulating protection layer on the second wiring layer, forming a second carrier on the insulative protection layer, and remvoing the first carrier. The formation of the second carrier provides the substrate structure with adequate rigidity to avoid breakage or warpage such that the miniaturization requirement can be satisfied.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

Patent OwnerAddress
SILICONWARE PRECISION INDUSTRIES CO LTDTAICHUNG

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Chia-Cheng Taichung, TW 140 822
Chiu, Shih-Chao Taichung, TW 29 96
Lin, Chun-Hsien Taichung, TW 286 2079
Pai, Yu-Cheng Taichung, TW 37 110
Shen, Tzu-Chieh Taichung, TW 26 88

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation