PREPARATION METHOD OF SEMICONDUCTOR DEVICE
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United States of America Patent
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Mar 17, 2016
app pub date -
Sep 15, 2015
filing date -
Sep 16, 2014
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Abstract
The invention presents a preparation method of semiconductor device, form an amorphous region in the semiconductor substrate, then form the source/drain region of the semiconductor device in the semiconductor substrate, the amorphous region can restrain the generation of end-of-range defects of the source/drain region, then can lower well the current leakage between the semiconductor device source/drain region and the semiconductor substrate; besides, after the dummy gate structure is eliminated, form a short channel inhibition region in the channel region; it can restrain the short-channel effect of the semiconductor device and satisfy the requirement of keeping narrowing the feature size of the device.
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