PLASMA PROCESSING METHOD
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United States of America Patent
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Issued Date -
Mar 17, 2016
app pub date -
Feb 19, 2015
filing date -
Sep 11, 2014
priority date (Note) -
Abandoned
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Abstract
A plasma processing method includes: a first step of introducing a gas having reactivity with a film to be processed disposed in advance on a top surface of a wafer into a processing chamber to form an adhesion layer on the film; a second step of expelling a part of the gas remaining in the processing chamber while supply of the gas having reactivity is stopped; a third step of introducing a rare gas into the processing chamber to form a plasma and desorbing reaction products of the adhesion layer and the film to be processed using particles and vacuum ultraviolet light in the plasma; and a fourth step of expelling the reaction products while the plasma is not formed.
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