METHODS AND DEVICES FOR DETECTING UNSATURATED COMPOUNDS
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United States of America Patent
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app pub date -
Nov 19, 2015
filing date -
Nov 25, 2009
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Abandoned
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Abstract
An insulated-gate field-effect transistor comprising a semiconductor substrate, a source region, a drain region, where the source region is spaced apart from the drain region to thereby form a channel, and both the source region and the drain region are located at or near one surface of the substrate, a gate insulator deposited over said channel, and a gate electrode, said gate electrode including a material that demonstrates appreciable change in resistivity relative to the concentration of acetylene, where the gate electrode covers the gate insulator.
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