Deposition Apparatus and Deposition Method Using the Same

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United States of America Patent

SERIAL NO

14952624

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Abstract

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The present invention provides a deposition apparatus and deposition method using the same. The deposition apparatus comprises: a process chamber, wherein a work piece is disposed therein; a plasma source chamber coupled to the process chamber, the plasma source chamber comprising a first plasma generator for ionizing a first gas in the plasma source chamber to generate a first plasma having ions, the ions of the first plasma with ions bombard the work piece; and a second plasma generator disposed within the process chamber, the second plasma generator ionized a second gas in the process chamber to generate a second plasma having radical, the second plasma having radical deposits a surface of the work piece.

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Patent Owner(s)

Patent OwnerAddress
ADVANCED ION BEAM TECHNOLOGY INC5F NO 18 CREATION ROAD 1 SCIENCE PARK HSIN-CHU 300

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
CHEN, Hao Pleasanton, US 1012 6150
SHENG, Tienyu Saratoga, US 6 11

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