COMPONENT FOR PLASMA PROCESSING APPARATUS, AND MANUFACTURING METHOD THEREFOR
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United States of America Patent
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Sep 15, 2015
filing date -
Sep 17, 2014
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Abstract
Particle generation can be suppressed from a thermally sprayed film of yttrium fluoride. A component exposed to plasma in a plasma processing apparatus is provided. The component includes a base and a film. The base is made of aluminum or an aluminum alloy, and an alumite film may be formed on a surface of the base. The film is formed by thermally spraying yttrium fluoride on a surface of the base or on a surface of an underlying layer including a layer provided on the base. A porosity of the film is 4% or less, and an arithmetic mean roughness of a surface of the film is 4.5 μm or less.
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