AL-W-O STACK STRUCTURE APPLICABLE TO RESISTIVE RANDOM ACCESS MEMORY
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United States of America Patent
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Issued Date -
Mar 10, 2016
app pub date -
May 27, 2014
filing date -
May 28, 2013
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Abandoned
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Abstract
An Al-W-O stack structure applicable to a resistive random access memory according to an embodiment of the invention comprises a tungsten top electrode, a tungsten oxide layer formed on the tungsten lower electrode, an aluminum oxide layer formed on the tungsten oxide layer and an aluminum top electrode formed on the aluminum oxide layer. The invention utilizes the different properties of two metals, namely aluminum and tungsten in bonding with oxygen ions, to obtain a resistive random access memory with more stable performances, lower power consumption and larger high resistance-low resistance ratio.
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