Semiconductor Device with Breakdown Preventing Layer
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
N/A
app pub date -
Nov 16, 2015
filing date -
Sep 30, 2012
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
A semiconductor device with a breakdown preventing layer is provided. The breakdown preventing layer can be located in a high-voltage surface region of the device. The breakdown preventing layer can include an insulating film with conducting elements embedded therein. The conducting elements can be arranged along a lateral length of the insulating film. The conducting elements can be configured to split a high electric field spike otherwise present in the high-voltage surface region during operation of the device into multiple much smaller spikes.
First Claim
Family
International Classification(s)
- [Classification Symbol]
- [Patents Count]
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully