METHOD FOR PRODUCING A SCHOTTKY DIODE ON A DIAMOND SUBSTRATE
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United States of America Patent
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Mar 10, 2016
app pub date -
Apr 18, 2014
filing date -
Apr 22, 2013
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Abstract
A method for producing a Schottky diode, including the following steps: oxygenating the surface of a semiconductive layer of monocrystalline diamond, in such a way as to replace hydrogen surface terminations of the semiconductive layer with oxygen surface terminations; and forming, by physical vapour deposition, a first conductive layer of zirconium or indium-tin oxide on the surface of the semiconductive layer.
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