MOLDED INTERPOSER FOR PACKAGED SEMICONDUCTOR DEVICE
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United States of America Patent
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Issued Date -
Mar 10, 2016
app pub date -
Sep 8, 2014
filing date -
Sep 8, 2014
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Abstract
A method for forming a pass-through layer of an interposer of a packaged semiconductor device in which conducting structures are extended between first and second ends of a casing. The conducting structures are subsequently encapsulated in a molding compound to form a molded bar, and the molded bar is sliced to obtain the pass-through layer. The pass-through layer has conducting vias, each corresponding to a sliced section of one of the conducting structures. The cost of pass-through layers formed in this manner may be less than that of comparable silicon or glass pass-through layers.
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