Method and Apparatus For Growing Binary, Ternary and Quaternary Materials on a Substrate

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United States of America Patent

APP PUB NO 20160068961A1
SERIAL NO

14478919

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Abstract

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Methods and systems for forming a material on a substrate are provided. Aspects of the methods involve the controlled introduction of a plurality of vapor reactants into a deposition chamber to form a material on the substrate having uniform surface roughness, conformality, thickness and composition. Aspects of the systems include a vapor feed component, a vapor distribution component, a containment component, and a controller configured to operate the systems to carry out the methods.

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Patent Owner(s)

Patent OwnerAddress
AIXTRON SEDORNKAULSTRA¿E 2 HERZOGENRATH 52134

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Karim, Zia Sunnyvale, US 7 88
Liu, Ming-Te Sunnyvale, US 11 125
Lu, Brian Sunnyvale, US 21 773
Mack, Jerry Sunnyvale, US 6 8
Yang, Lin Sunnyvale, US 1008 9000

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